非晶形半导体物理学PHYSICS OF AMORPHOUS SEMICONDUCTORS

出版时间：1999-12  出版社：中国矿大出版社  作者：Morigaki, Kazuo  页数：418  

内容概要

This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors dearly, it will be essential reading for young scientists intending to develop new pre-paration techniques for more ideal amorphous semiconductors e.g.a-Si:H, to fabricate stable and efficient solar cells and thin film tran-sistors and new artificial amorphous materiats such as multilayers forquantum devices.    A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si:H, nature of weak bonds and gap states in a-Si:H, mechanisms for light-induced defect creation in a-Si:H and chalcogenides, and quantum phenomena in multilayer firms.

书籍目录

PrefaceAcknowledgement1 Introduction2 Disorder and glass transition  2.1 Definition of disorder  2.2 Glass transition  2.3 Glass formation3 Preparation  3.1 Rapid quenching from the liquid phase  3.2 Rapid condensation from the gas phase    3.2.1 Physical vapour deposition    3.2.2 Chemical vapour deposition4 Structure  4.1 Diffraction pattern  4.2 Models for the amorphous structure    4.2.1  Tetrahedrally bonded semiconductors: a-Si and a-Ge    4.2.2  Chalcogenide glasses  4.3 Medium-range order of small-angle X-ray scattering  4.4 Computer simulation    4.4.1  Monte Carlo method    4.4.2 Molecular-dynamics method5 Electronic states  5.1 Nature of conduction and valence bands and tail states  5.2 Anderson localization6 Gap states and defects  6.1 Gap states  6.2 Measurements of defects  6.3 Dangling bonds in a-Si and a-Si:H  6.4 Defects in chalcogenide glasses7 Transport  7.1 Electrical conduction near the mobility edge  7.2 The scaling theory of Anderson localization  7.3 Conductivity taking into account multiple scatter-ing - deviation of conductivity from the Boltzmann conductivity  7.4 Transition from localization to delocalization and conductivity  7.5 Band conduction  7.6 Hopping conduction    7.6.1 Nearest-neighbor hopping    7.6.2 Variable-range hopping  7.7 AC conduction  7.8 Hall effect  7.9 Thermoelectric power  7.10 Relationship between the electrical conductivity and the thermoelectric power  7.11 Electron-phonon interaction and electrical conduction 1  7.12 Dispersive transport8 Optical properties  8.1 Optical absorption    8.1.1  Band to band transition and absorption edge    8.1.2  High energy absorption    8.1.3  Tail absorption9 Recombination10 Electron-phonon interaction and self-trapping of carriers11 Light-induced phenomena12 Thermal equilibrium processes and defect formation mechanisma13 Artificial materials14 Summary of specific materialsReferencesIndex