射频电路设计

出版时间：2010-1  出版社：电子工业出版社  作者：（美）路德维格，（美）波格丹诺夫　著  页数：553  
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前言

　　High-frequency circuit design continues to enjoy significant industrial attention， triggered by a host of radio-frequency （RF） and microwave （MW） products. Improved semiconductor devices， new board materials， and advanced fabrication technologies have made possible a proliferation of high-speed digital and analog systems that profoundly influence wireless communication， global positioning， radar， remote sensing， and related electrical and computer engineering disciplines. As a consequence， this interest has translated into market demands for trained engineers and professionals with knowledge of high-frequency circuit design principles. Since the publication of the first edition of this textbook in January， 2000， the need for well-educated RF professionals has surged， making a text that teaches the fundamentals of high-frequency circuits even timelier. The objective of this second edition remains the same： to present the fundamental RF design aspects and the underlying distributed circuit theory with minimal emphasis on electromagnetics. We have written this book in a manner that requires no EM background beyond a first year undergraduate physics course in fields and waves. Students and practicing engineers equipped with rudimentary exposure to circuit theory and/or microelectronics can read this book and grasp the entire spectrum of high-frequency circuit principles involving passive and active discrete devices， transmission lines， filters， amplifiers， mixers， oscillators and their design procedures. Lengthy mathematical derivations are either relegated to the appendices or placed in examples， thereby separating dry theoretical details from the main text. Although de-emphasizing theory creates a certain loss in precision， it promotes readability and focus on the underlying circuit concepts. What has changed from the first edition? Besides our obvious attempt to eliminate typos and inconsistencies， the second edition was improved in several important ways. First， we have added Practically Speaking sections at the end of each chapter. In these sections， key design concepts and measurement procedures are discussed in detail. Topics such as the construction of an attenuator， a microstrip filter， or the simulation of a low noise RF amplifier with bias and matching networks， are presented similarly to a lab component that accompanies the lectures. Equipped with the right instrumentation and software simulator， the reader can easily replicate the circuits. Second， topics of interest， helpful definitions， and noteworthy observations are placed on the margins and offset from the main text. In addition to highlighting their importance， this approach allows us to emphasize and better explain items that do not directly fit into the flow of the main text. For example， the coverage of a Phase Lock Loop （PLL） system would exceed the scope of this book. However， a brief explanation of a PLL provides context and extra motivation for the underlying high-frequency circuits. It furthermore inspires the readers to explore these topics on their own. Third， more emphasis is placed on nonlinear design principles， specifically in regard to oscillators and their associated resonator circuits. Accepting the challenge to deliver a high degree of linear and nonlinear design experience， we have included a number of examples that analyze in considerable depth， often extending over several pages， the philosophy and the intricacies of various modeling approaches. While linear scattering parameter simulations are adequate under certain conditions， nonlinear simulations， for instance the harmonic balance analysis， are required for more sophisticated designs. Oscillator and mixer， as well as amplifier designs can greatly benefit from a nonlinear circuit simulation. Naturally， the use of appropriate simulation tools creates problems in terms of their capabilities， accuracies， speeds， and not least costs. The availability of circuit simulators and RF software tools has steadily increased over the years. Indeed， the authors are routinely contacted about simulators that offer exceptional?performances under particular constraints. It is not our goal to render an assessment or endorsement of a specific simulator （the authors have no commercial， nor professional ties with any vendor）. In general， professional high-frequency simulators are expensive and require familiarity to use them effectively. Several years ago， the ECE department at WPI decided after an extensive review to adopt Advanced Design Systems （ADS） of Agilent Technologies as the default high-frequency circuit simulator for its undergraduate and graduate electrical and computer engineering students. For this reason， and because of its wide-spread industrial use， we rely on ADS simulations for most of our circuits. However， for readers without access to commercial simulators， we created a number of standard MATLAB M-files that can be downloaded from our website listed in Appendix G. Because MATLAB is a popular and relatively inexpensive mathematical tool， many examples discussed in this book can be executed and the results graphically displayed in a matter of seconds. Specifically， the various Smith Chart computations of impedance transformations should appeal to the reader. Since our goal focuses on circuits， the textbook purposely omitted high-speed digital circuits as well as coding and modulation aspects. Although important， these topics would require too many additional pages and would move the book too far away from its original intent of providing a fundamental， one- or two-semester introduction to RF circuit design. In the ECE department at WPI， this does not constitute a disadvantage， as most of these topics are taught in specialized communication systems engineering courses. The organization of this text is as follows： Chapter 1 presents a general explanation of why basic circuit theory needs to be modified as the operating frequency is increased to a level where the wavelength becomes comparable with circuit dimensions. Chapter 2 then develops the fundamental concepts of distributed circuit theory. Chapter 3 introduces the Smith Chart as a generic tool for dealing with the periodic impedance behavior on the basis of the reflection coefficient. Chapter 4 presents networks and flow-graph representations， and how the terminal conditions can be described with so-called scattering parameters. The network models and their scattering parameter descriptions are utilized in Chapter 5 to develop passive RF filter configurations. To address active devices， Chapter 6 provides a review of key semiconductor fundamentals， followed by their circuit models representation in Chapter 7. The impedance matching and biasing of bipolar and field effect transistors is taken up in Chapter 8. Chapter 9 focuses on a number of key high-frequency amplifier configurations and their design intricacies， ranging from low noise to high power applications. Finally， Chapter 10 introduces the reader to nonlinear systems and their design， covering oscillator and mixer circuits. This book is used in the ECE department at WPI as a required text for its standard 7-week （5 lecture hours per week） course in RF circuit design （ECE 3113， Introduction to RF Circuit Design）. The course has primarily attracted an audience of 3rd and 4th year undergraduate students with a background in microelectronics. The course does not include a separate laboratory， although a total of six practical circuits （all part of the Practically Speaking sections） are presented to the students who are then instructed to conduct their own measurements with a network analyzer. In addition， ADS simulations are incorporated as part of the regular lectures. Each chapter is self-contained， with the goal of providing wide flexibility in organizing the course material. At WPI， the content of approximately one three semester hour course is compressed into a 7-week period （consisting of a total of 28-29 lectures）. The topics covered in ECE 3113 are shown in the table below.　 EE 3113， Introduction to RF Circuit Design Chapter 1， Introduction Sections 1.1-1.6 Chapter 2， Transmission Line Analysis Sections 2.1-2.12 Chapter 3， Smith Chart Sections 3.1-3.5 Chapter 4， Single- and Multi-Port Networks Sections 4.1-4.5 Chapter 7， Active RF Component Modeling Sections 7.1-7.2 Chapter 8， Matching and Biasing Networks Sections 8.1-8.4 Chapter 9， RF Transistor Amplifier Designs Sections 9.1-9.4　The remaining material is targeted for a second （7-week） term covering more advanced topics such as microwave filters， equivalent circuit models， oscillators and mixers. An organizational plan is provided below.　Advanced Principles of RF Circuit Design Chapter 5， A Brief Overview of RF Filter Design Sections 5.1-5.5 Chapter 6， Active RF Components Sections 6.1-6.6 Chapter 7， Active RF Component Modeling Sections 7.3-7.5 Chapter 9， RF Transistor Amplifier Designs Sections 9.5-9.8 Chapter 10， Oscillators and Mixers Sections 10.1-10.4　Obviously， the entire course organization remains subject to change depending on total classroom time， student background， and interface requirements with related courses. At the writing of this 2nd edition， a new graduate course is being designed that combines the advanced RF circuit topics of Chapters 5-10 with a classical graduate-level electromagnetics text. Pearson offers many different products around the world to facilitate learning. In countries outside the United States， some products and services related to this textbook may not be available due to copyright and/or permissions restrictions. If you have questions， you can contact your local office by visitinginternational or you can contact your local Pearson representative.　　ACKNOWLEDGEMENTS　　The authors are grateful to a number of colleagues， students， and practicing engineers. Prof. Fred Looft， head of the ECE department， was instrumental in providing departmental funding for the networked ADS simulator resources and the recently acquired network analyzers. Our thanks go to Korn?Vennema and Scott Blum of NXP （formerly Philips Semiconductors） for providing technical RF expertise， sponsoring student projects， and making available measurement equipment. Professor Sergey N. Makarov added assistance through technical discussions. Brian Foley， Peter Serano， Shaileshkumar Raval， Dr. Rostislav Lemdiasov， Aghogho Obi， Souheil Benzerrouk， Dr. Funan Shi are current and former graduate students who provided insight， sometimes a fresh view， and always much appreciated ambience and support in the Center for Imaging and Sensing （CIS） at WPI. The authors are particularly grateful to Prof. Diran Apelian， director of the Metal Processing Institute at WPI， and Scott Biederman of GM for introducing them to the importance of microwave imaging and RF principles in material processing. R. L. would like to acknowledge his former co-author Dr. Pavel Bretchko; his brilliant effort and hard work helped shape the original text and laid the foundation of this second edition. Tom Robbins， the publisher of the first edition， is thanked for his constant support and editorial insight over the past 7 years. It is professionals like Mr. Robbins to whom the academic publishing industry owes its existence. The staff of Prentice Hall， specifically Alice Dworkin， Rose Kernan， and G. Muthukumar， Senior Project Manager， Laserwords Private Limited， Chennai， India， are thanked for their support in making this book project a reality.

内容概要

本书从低频电路理论到射频、微波电路理论的演化过程出发，讨论以低频电路理论为基础并结合高频电压、电流的波动特征来分析和设计射频、微波系统的方法——微波等效电路法，使不具备电磁场理论和微波技术背景的读者也能了解和掌握射频、微波电路的基本设计原则和方法。全书共10章，涵盖传输线、匹配器、滤波器、混频器、放大器和振荡器等主要射频微波系统单元的理论分析和设计问题及电路分析工具(圆图、网络参量和信号流图)。书中例题非常有实用价值。全书大多数电路都经过ADS仿真，并提供标准MATLAB计算程序。    本书适合作为通信、电子类学科学生的双语课程教材，也适合工程技术人员参考。

书籍目录

Chapter 1 Introduction/1  1.1 Importance of Radio Frequency Design/2  1.2 Dimensions and Units/5  1.3 Frequency Spectrum/7  1.4 RF Behavior of Passive Components/8    1.4.1 Resistors at High Frequency/13    1.4.2 Capacitors at High Frequency/15    1.4.3 Inductors at High Frequency/18  1.5 Chip Components and Circuit Board Considerations/20    1.5.1 Chip Resistors/20    1.5.2 Chip Capacitors/21    1.5.3 Surface-Mounted Inductors/22  1.6 RF Circuit Manufacturing Processes/22  1.7 Summary/25Chapter 2 Transmission Line Analysis/33  2.1 Why Transmission Line Theory?/33  2.2 Examples of Transmission Lines/36    2.2.1 Two-Wire Lines/36    2.2.2 Coaxial Line/37    2.2.3 Microstrip Lines/37  2.3 Equivalent Circuit Representation/39  2.4 Theoretical Foundation/41    2.4.1 Basic Laws/41  2.5 Circuit Parameters for a Parallel-Plate Transmission Line/46  2.6 Summary of Different Line Configurations/49  2.7 General Transmission Line Equation/49    2.7.1 Kirchhoff Voltage and Current Law Representations/49    2.7.2 Traveling Voltage and Current Waves/53    2.7.3 Characteristic Impedance/53    2.7.4 Lossless Transmission Line Model/54  2.8 Microstrip Transmission Lines/54  2.9 Terminated Lossless Transmission Line/58    2.9.1 Voltage Reflection Coefficient/58    2.9.2 Propagation Constant and Phase Velocity/60    2.9.3 Standing Waves/60  2.10 Special Termination Conditions/63    2.10.1 Input Impedance of Terminated Lossless Line/63    2.10.2 Short-Circuit Terminated Transmission Line/64    2.10.3 Open-Circuited Transmission Line/66    2.10.4 Quarter-Wave Transmission Line/67  2.11 Sourced and Loaded Transmission Line/70    2.11.1 Phasor Representation of Source/70    2.11.2 Power Considerations for a Transmission Line/71    2.11.3 Input Impedance Matching/73    2.11.4 Return Loss and Insertion Loss/74  2.12 Summary/76Chapter 3 The Smith Chart/83  3.1 From Reflection Coefficient to Load Impedance/83    3.1.1 Reflection Coefficient in Phasor Form/84    3.1.2 Normalized Impedance Equation/85    3.1.3 Parametric Reflection Coefficient Equation/86    3.1.4 Graphical Representation/89  3.2 Impedance Transformation/90    3.2.1 Impedance Transformation for General Load/90    3.2.2 Standing Wave Ratio/92    3.2.3 Special Transformation Conditions/93    3.2.4 Computer Simulations/97  3.3 Admittance Transformation/98    3.3.1 Parametric Admittance Equation/98    3.3.2 Additional Graphical Displays/101  3.4 Parallel and Series Connections/102    3.4.1 Parallel Connection of R and L Elements/102    3.4.2 Parallel Connection of R and C Elements/103    3.4.3 Series Connection of R and L Elements/103    3.4.4 Series Connection of R and C Elements/104    3.4.5 Example of a T-Network/105  3.5 Summary/109Chapter 4 Single- and Multiport Networks/117  4.1 Basic Definitions/117  4.2 Interconnecting Networks/124    4.2.1 Series Connection of Networks/124    4.2.2 Parallel Connection of Networks/126    4.2.3 Cascading Networks/126    4.2.4 Summary of ABCD Network Representations/127  4.3 Network Properties and Applications/131    4.3.1 Interrelations between Parameter Sets/131    4.3.2 Analysis of Microwave Amplifier/132  4.4 Scattering Parameters/135    4.4.1 Definition of Scattering Parameters/136    4.4.2 Meaning of S-Parameters/138    4.4.3 Chain Scattering Matrix/140    4.4.4 Conversion between Z- and S-Parameters/142    4.4.5 Signal Flowgraph Modeling/143    4.4.6 Generalization of S-Parameters/148    4.4.7 Practical Measurements of S-Parameters/150  4.5 Summary/156Chapter 5 An Overview of RF Filter Design/164  5.1 Basic Resonator and Filter Configurations/165    5.1.1 Filter Types and Parameters/165    5.1.2 Low-Pass Filter/168    5.1.3 High-Pass Filter/171    5.1.4 Bandpass and Bandstop Filters/172    5.1.5 Insertion Loss/177  5.2 Special Filter Realizations/180    5.2.1 Butterworth-Type Filters/180    5.2.2 Chebyshev-Type Filters/183    5.2.3 Denormalization of Standard Low-Pass Design/188  5.3 Filter Implementation/196    5.3.1 Unit Elements/197    5.3.2 Kuroda誷 Identities/198    5.3.3 Examples of Microstrip Filter Design/199  5.4 Coupled Filter/206    5.4.1 Odd and Even Mode Excitation/206    5.4.2 Bandpass Filter Section/209    5.4.3 Cascading Bandpass Filter Elements/210    5.4.4 Design Example/211  5.5 Summary/215Chapter 6 Active RF Components/223  6.1 Semiconductor Basics/224    6.1.1 Physical Properties of Semiconductors/224    6.1.2 The pn-Junction/229    6.1.3 Schottky Contact/236  6.2 RF Diodes/239    6.2.1 Schottky Diode/239    6.2.2 PIN Diode/242    6.2.3 Varactor Diode/246    6.2.4 IMPATT Diode/248    6.2.5 Tunnel Diode/250    6.2.6 TRAPATT, BARRITT, and Gunn Diodes/251  6.3 Bipolar-Junction Transistor/252    6.3.1 Construction/252    6.3.2 Functionality/254    6.3.3 Frequency Response/259    6.3.4 Temperature Behavior/261    6.3.5 Limiting Values/264    6.3.6 Noise Performance/265  6.4 RF Field Effect Transistors/266    6.4.1 Construction/266    6.4.2 Functionality/267    6.4.3 Frequency Response/272    6.4.4 Limiting Values/272    6.5 Metal Oxide Semiconductor Transistors/273    6.5.1 Construction/273    6.5.2 Functionality/274  6.6 High Electron Mobility Transistors/275    6.6.1 Construction/276    6.6.2 Functionality/276    6.6.3 Frequency Response/279  6.7 Semiconductor Technology Trends/279  6.8 Summary/284Chapter 7 Active RF Component Modeling/290  7.1 Diode Models/290    7.1.1 Nonlinear Diode Model/290    7.1.2 Linear Diode Model/293  7.2 Transistor Models/295    7.2.1 Large-Signal BJT Models/295    7.2.2 Small-Signal BJT Models/301    7.2.3 Large-Signal FET Models/311    7.2.4 Small-Signal FET Models/314    7.2.5 Transistor Amplifier Topologies/317    7.3 Measurement of Active Devices/318    7.3.1 DC Characterization of Bipolar Transistor/318    7.3.2 Measurements of AC Parameters of Bipolar Transistors/320    7.3.3 Measurements of Field Effect Transistor Parameters/323  7.4 Scattering Parameter Device Characterization/325  7.5 Summary/332Chapter 8 Matching and Biasing Networks/338  8.1 Impedance Matching Using Discrete Components/338    8.1.1 Two-Component Matching Networks/338    8.1.2 Forbidden Regions, Frequency Response, and Quality Factor/346    8.1.3 T and Pi Matching Networks/354  8.2 Microstrip Line Matching Networks/357    8.2.1 From Discrete Components to Microstrip Lines/357    8.2.2 Single-Stub Matching Networks/360    8.2.3 Double-Stub Matching Networks/364  8.3 Amplifier Classes of Operation and Biasing Networks/366    8.3.1 Classes of Operation and Efficiency of Amplifiers/367    8.3.2 Bipolar Transistor Biasing Networks/371    8.3.3 Field Effect Transistor Biasing Networks/376  8.4 Summary/382Chapter 9 RF Transistor Amplifier Design/387  9.1 Characteristics of Amplifiers/387  9.2 Amplifier Power Relations/388    9.2.1 RF Source/388    9.2.2 Transducer Power Gain/389    9.2.3 Additional Power Relations/390  9.3 Stability Considerations/392    9.3.1 Stability Circles/392    9.3.2 Unconditional Stability/395    9.3.3 Stabilization Methods/400  9.4 Constant Gain/402    9.4.1 Unilateral Design/402    9.4.2 Unilateral Figure of Merit/407    9.4.3 Bilateral Design/408    9.4.4 Operating and Available Power Gain Circles/411  9.5 Noise Figure Circles/416  9.6 Constant VSWR Circles/419  9.7 Broadband, High-Power, and Multistage Amplifiers/423    9.7.1 Broadband Amplifiers/423    9.7.2 High-Power Amplifiers/431    9.7.3 Multistage Amplifiers/434  9.8 Summary/440Chapter 10 Oscillators and Mixers/446  10.1 Basic Oscillator Models/447    10.1.1 Feedback Oscillator/447    10.1.2 Negative Resistance Oscillator/448    10.1.3 Oscillator Phase Noise/458    10.1.4 Feedback Oscillator Design/463    10.1.5 Design Steps/465    10.1.6 Quartz Oscillators/468  10.2 High-Frequency Oscillator Configuration/470    10.2.1 Fixed-Frequency Oscillators/473    10.2.2 Dielectric Resonator Oscillators/478    10.2.3 YIG-Tuned Oscillator/482    10.2.4 Voltage-Controlled Oscillator/483    10.2.5 Gunn Element Oscillator/485  10.3 Basic Characteristics of Mixers/486    10.3.1 Basic Concepts/487    10.3.2 Frequency Domain Considerations/489    10.3.3 Single-Ended Mixer Design/490    10.3.4 Single-Balanced Mixer/497    10.3.5 Double-Balanced Mixer/498    10.3.6 Integrated Active Mixers/498    10.3.7 Image Reject Mixer/502  10.4 Summary/512Appendix A Useful Physical Quantities and Units/517Appendix B Skin Equation for a Cylindrical Conductor/522Appendix C Complex Numbers/525Appendix D Matrix Conversions/527Appendix E Physical Parameters of Semiconductors/530Appendix F Long and Short Diode Models/531Appendix G Couplers/534Appendix H Noise Analysis/540Appendix I Introduction to MATLAB/549

编辑推荐

　　涵盖传输线、匹配器、滤波器、混频器、放大器和振荡器等主要射频微波系统单元的理论分析和设计问题及电路分析工具等。该书可供各大专院校作为教材使用，也可供从事相关工作的人员作为参考用书使用。

用户评论 (总计13条)

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•   实用教程，实例讲解，很好，很满意
•   书绝对经典 但是书的纸质差了点~~
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•   不错，很喜欢，爱不释手
•   发货速度也很快哦
•   非常不错，虽然英文看上去比较痛苦
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•   书本总体还算满意，不错！
  只是有人读过，书面上、封面有很深的印痕！看专业书还是看原版的比较爽。