出版时间:2008-2 出版社:科学 作者:李 页数:697
内容概要
本书全面介绍了半导体物理的基本内容,这些内容是理解半导体的物理性质和光电器件制备原理的基础。本书系统性强,合理地安排了物理原理,表征法以及半导体材料和器件的应用等内容,兼顾了物理学家、材料学家和设备工程师的需求。本书反映了半导体技术在过去十年的进步,包括许多新出现并已进入市场的半导体器件。本书适合于电子工程,材料科学,物理和化学工程的研究生,也可供半导体工业的过程工程师和设备工程师参考。
作者简介
作者:(美国)李(Li,S.S)
书籍目录
Preface1.Classification of Solids and Crystal Structure 1.1 Introduction 1.2 The Bravais Lattice 1.3 The Crystal Structure 1.4 Miller Indices and Crystal Planes 1.5 The Reciprocal Lattice and Brillouin Zone 1.6 Types of Crystal Bindings 1.7 Defects in a Crystalline Solid Problems Bibliography2.Lattice Dynamics 2.1 Introduction 2.2 The One-Dimensional Linear Chain 2.3 Dispersion Relation for a Three-Dimensional Lattice 2.4 The Concept of Phonons 2.5 The Density of States and Lattice Spectrum 2.6 Lattice Specific Heat Problems References Bibliography3.Semiconductor Statistics 3.1 Introduction 3.2 Maxwell-Boltzmann Statistics 3.3 Fermi-Dirac Statistics 3.4 Bose-Einstein Statistics 3.5 Statistics for the Shallow-Impurity States in a Semiconductor Problems Bibliography4.Energy Band Theory 4.1 Introduction 4.2 Basic Quantum Concepts and Wave Mechanics 4.3 The Bloch-Floquet Theorem 4.4 The Kronig-Penney Model 4.5 The Nearly Free Electron Approximation 4.6 The Tight-Binding Approximation 4.7 Energy Band Structures for Some Semiconductors 4.8 The Effective Mass Concept for Electrons and Holes 4.9 Energy Band Structures and Density of States for Low-Dimensional Systems Problems References Bibliography5.Equilibrium Properties of Semiconductors 5.1 Introduction 5.2 Densities of Electrons and Holes in a Semiconductor 5.3 Intrinsic Semiconductors 5.4 Extrinsic Semiconductors 5.5 Ionization Energies of Shallow-and Deep-Level Impurities 5.6 Hall Effect,Electrical Conductivity,and Hall Mobility 5.7 Heavy Doping Effects in a Degenerate Semiconductor Problems References Bibliography6.Excess Carrier Phenomenon in Semiconductors 6.1 Introduction 6.2 Nonradiative Recombination: The Shockley-Read-Hall Model 6.3 Band-to-Band Radiative Recombination 6.4 Band-to-Band Auger Recombination 6.5 Basic Semiconductor Equations 6.6 The Charge-Neutrality Equation 6.7 The Haynes-Shockley Experiment 6.8 The Photoconductivity Decay Experiment 6.9 Surface States and Surface Recombination Velocity 6.10 Deep-Level Transient Spectroscopy Technique 6.11 Surface Photovoltage Technique Problems References Bibliography7.Transport Properties of Semiconductors8.Scattering Mechanisms and Carrier Moblities in Semiconductors9.Optical Properties and Photoelectric Effects10.Metal-Semiconductor Contacts11.P-n Junction Diodes12.Solar Cells and Photodetectors13.Light-Emitting Devices14.Bipolar Juction Transistors15.Metal-Oxide-Semiconductor Field-Effect Transistors16.High-Speed Ⅲ-Ⅴ Semiconductor DevicesSolutions to Selected ProblemsAppendix Index
编辑推荐
《半导体物理电子学(第2版)》适合于电子工程,材料科学,物理和化学工程的研究生,也可供半导体工业的过程工程师和设备工程师参考。
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